HT Semi

Automative Electronics

HT Semiconductor offers comprehensive power semiconductor solutions for automotive electronics applications, including energy storage systems, motor drives, battery management systems (BMS), and electric vehicle charging stations. By leveraging advanced technologies and integrated design capabilities, HT provides customers with a one-stop service for power device products that meet the stringent requirements of the automotive industry. These solutions are designed to deliver high efficiency, reliability, and durability, supporting the growing demand for smarter and more sustainable transportation. With a strong focus on innovation and quality, HT Semiconductor helps its customers optimize system performance while reducing overall costs and improving energy management in electric and hybrid vehicles.

System Diagram

For lithium battery packs in energy storage systems, HT Semiconductor offers a wide range of medium- and low-voltage MOSFET products. These MOSFETs feature extremely low Rds(on), which helps reduce conduction losses and improve overall system efficiency. As a result, the operating temperature of the battery is lowered, enhancing both battery life and safety. In addition, the excellent avalanche energy (EAS) performance of HT’s MOSFETs allows them to better handle abnormal short-circuit conditions, further improving the reliability of the battery pack under demanding load scenarios.

Portable energy storage products are used in a wide range of scenarios, with diverse load requirements and often harsh and variable operating environments, placing high demands on product stability and reliability. At the same time, to ensure ease of portability, these products must be compact and lightweight, which leads to higher requirements for power density.

HT offers a diverse range of product categories and stable performance to support customers in designing better and more efficient products. The company provides an extensive selection of low-voltage MOSFETs featuring an ultra-low figure of merit (FOM, defined as Rds(on) × Qg), which significantly reduces both conduction and switching losses. This enables customers to improve product efficiency and achieve higher power density.

The excellent avalanche energy (EAS) characteristics help ensure compatibility with a variety of load applications. With an operating junction temperature range of -40°C to 150°C, HT’s MOSFETs are suitable for use in a wide range of environmental conditions. In addition, the products offer low static and dynamic losses, strong short-circuit withstand capability, and high application reliability.